Ferroelectric Memory GmbH, NaMLab gGmbH and Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. working together on a publicly funded project of Sächsische Aufbaubank GmbH (SAB)

FeFET technology solves one of the most pressing problems facing the semiconductor industry: providing embedded non-volatile memory (ENVM) technology for 28nm technology nodes.  

Such memory technology has applications in both existing and emerging semiconductor markets. Existing applications include microcontrollers (market volume $25 billion) and systems-on-a-chip (another $25 billion), while emerging applications include the artificial intelligence market with an expected market volume of $56 billion. 

The goal of the project “Innovations for the improvement of reliability properties and dissemination of the user portfolio in the field of ferroelectric memories” (dt.: Innovationenfür die Verbesserung der Zuverlässigkeitseigenschaften und Verbreiterung des Anwendungsportfoliosauf dem Gebiet ferroelektrischer Speicher, IOWA) is to further explore FeFET technology to meet the requirements of embedded non-volatile memory and make it available on an industrial scale together with FMC’s foundry partners. This will create the conditions for the development of these markets by a highly specialized company from Dresden, Saxony.

This project is supported and co-financed by the Europäischer Fond zur Förderung der regionale Entwicklung (EFRE) and Europäischer Sozialfond (ESF) of the Freistaat Sachsen.

 

“Endurance and targeted programming behavior of HfO2-FeFETs” FMC contribution at IMW

We are looking forward to next week’s International Memory Workshop (IMW) which will be a virtual event. In session #6, Haidi Zhou from FMC will present latest results on “Endurance and targeted programming behavior of HfO2-FeFETs”.

Also check out the program and discover additional contributions on ferroelectric HfO2 from Globalfoundries, NaMLab, Fraunhofer and many more:

http://www.ewh.ieee.org/soc/eds/imw/Documents/IMW2020_Program_v2.pdf 

 
 

Ferroelectric hafnium oxide: The ideal memory material

Memories for the age of IoT – and beyond

About FMC

The Ferroelectric Memory Company is funded by the Federal Ministry for Economic Affairs and Energy as well as by the European Social Fund under the grant “EXIST Forschungstransfer”.