FMC just received a seed investment from HTGF to implement first memory IP products by 2018. “With the potential to outperform the state of the art by orders of magnitude, FMC could disrupt an entire market. We are excited to be part of that journey.” says Yann Fiebig, HTGF’s investment manager. For more details see:

https://high-tech-gruenderfonds.de/en/dresden-memory-start-up-ferroelectric-memory-company-fmc-receives-seed-investment-by-htgf/

On the 22^nd of September, FMC presents on “CMOS Compatible Ferroelectric Devices for Beyond 1X nm Technology Nodes” at this year’s SSDM conference in Sendai, Japan. The talk will be given by Dr. Halid Mulaosmanovic from our mother institute NaMLab gGmbH (http://www.ssdm.jp/index.html).

Moreover, on the 25^th of September, FMC’s CEO Dr. Stefan Müller will talk about “FeFET – The ideal embedded NVM for the age of IoT” at this year’s “Leading Edge Embedded NVM Workshop” in Gardanne, France (http://www.e-nvm.org/fr/home.html).

FMC is looking forward to meet you in Japan and France!

For the first time researchers from IMEC presented the feasibility of FeFET-based 3D NAND architectures utilizing ferroelectric hafnium oxide. The results were shown at this year’s VLSI conference in Kyoto, Japan. For details please visit https://phys.org/news/2017-06-breakthrough-cmos-compatible-ferroelectric-memory.html