An article on FMC’s ferroelectric memory technology has just been published: https://semiengineering.com/a-new-memory-contender/. It represents a nice overview on the range of semiconductor innovations that could emerge during the next years due to ferroelectric hafnium oxide. Enjoy the read!

FMC has been selected to join the German Accelerator Tech Program (https://germanaccelerator.com/). The program supports high potential German technology startups and emerging companies to enter the U.S. market and develop into global market leaders.

Meet us in person in Silicon Valley during Q1/2018!

Have a look at talk 19.7 at IEDM next week (https://ieee-iedm.org/session-19-memory-technology-charge-based-memories-and-advanced-memories/) to get the latest update on FeFET for 28 nm and 22 nm FDSOI.

Looking forward to meet you there!