For the first time researchers from IMEC presented the feasibility of FeFET-based 3D NAND architectures utilizing ferroelectric hafnium oxide. The results were shown at this year’s VLSI conference in Kyoto, Japan. For details please visit https://phys.org/news/2017-06-breakthrough-cmos-compatible-ferroelectric-memory.html
Discover the latest FeFET publication of our parent institute NaMLab at this year’s 2017 Symposia on VLSI Technology and Circuits http://www.vlsisymposium.org, session 13, talk T13-3 (Thursday, June 8th, 09:20 AM). We discuss the possibilities of FeFET devices to serve as synapses for neuromorphic systems. Moreover, we recommend session 12 which is 100% dedicated to devices based on ferroelectric hafnia and its solid solution HZO. Explore the possibilities of ferroelectric HfO2!
The Ferroelectric Memory Company is funded by the Federal Ministry for Economic Affairs and Energy as well as by the European Social Fund under the grant “EXIST Forschungstransfer”.