“Endurance and targeted programming behavior of HfO2-FeFETs” FMC contribution at IMW

We are looking forward to next week’s International Memory Workshop (IMW) which will be a virtual event. In session #6, Haidi Zhou from FMC will present latest results on “Endurance and targeted programming behavior of HfO2-FeFETs”.

Also check out the program and discover additional contributions on ferroelectric HfO2 from Globalfoundries, NaMLab, Fraunhofer and many more:



FMC’s Board of Directors

FMC’s Board of Directors consists of venture capitalists and experienced senior executives with successful track records in the semiconductor industry: Dr. Paul-Josef Patt as chairman, Yann Fiebig, Hans Rohrer and Adam A. Kablanian.

For more information klick here.

Ferroelectric hafnium oxide: The ideal memory material

Memories for the age of IoT – and beyond

About FMC

The Ferroelectric Memory Company is funded by the Federal Ministry for Economic Affairs and Energy as well as by the European Social Fund under the grant “EXIST Forschungstransfer”.