Last week, FMC managed to achieve a second place out of a total of 1400 applicants at Shenzhen’s Innovation and Entrepreneurship International Competition:
For more information on China’s general support of memory technologies, see also:
An article on FMC’s ferroelectric memory technology has just been published: https://semiengineering.com/a-new-memory-contender/. It represents a nice overview on the range of semiconductor innovations that could emerge during the next years due to ferroelectric hafnium oxide. Enjoy the read!
FMC has been selected to join the German Accelerator Tech Program (https://germanaccelerator.com/). The program supports high potential German technology startups and emerging companies to enter the U.S. market and develop into global market leaders.
Meet us in person in Silicon Valley during Q1/2018!
The Ferroelectric Memory Company is funded by the Federal Ministry for Economic Affairs and Energy as well as by the European Social Fund under the grant “EXIST Forschungstransfer”.