FMC is a Ferroelectric Hafnium Oxide memory company developing emerging Non Volatile Memory solutions for stand-alone and embedded applications.
Your future job:
- Responsible for the design and development of emerging Ferroelectric Hafnium Oxide memory products
- Define memory chip architecture with the best Power-Performance-Area tradeoff
- Design and development of analog circuits for NVM memories such as sense amps, decoders, data path, etc.
- Work with Product Engineers to implement the desired test features to guarantee proper device testability
Your profile:
- M.Sc. / Ph.D. in electrical engineering
- 10 years of experience in FeRAM or DRAM design
- Familiarity with industry-standard design and simulation tools (e.g., Cadence® DFII, Virtuoso, Spice simulator, Verilog-A)
- Good knowledge of CMOS technology
- Strong problem-solving skills
- Ability to work in team
- Interest in working in a start-up environment
Period: Planned starting date ASAP
Location: Milan (Italy) or Dresden (Germany)
We offer:
Inspiring working environment, support and encouragement to develop both personally and professionally, regular team events, ticket for public transport, lunch allowance, employee support, a competitive and equal salary in a semiconductor startup environment and more…
For further questions or to apply please contact:
Lisa Leinemann
HR & Office Manager
Tel.: +49 351 271 88347