FeRAM Design Engineer

FMC is a Ferroelectric Hafnium Oxide memory company developing emerging Non Volatile Memory solutions for stand-alone and embedded applications.

Your future job:

  • Responsible for the design and development of emerging Ferroelectric Hafnium Oxide memory products
  • Define memory chip architecture with the best Power-Performance-Area tradeoff
  • Design and development of analog circuits for NVM memories such as sense amps, decoders, data path, etc.
  • Work with Product Engineers to implement the desired test features to guarantee proper device testability

Your profile:

  • M.Sc. / Ph.D. in electrical engineering
  • 10 years of experience in FRAM or DRAM design
  • Familiarity with industry-standard design and simulation tools (e.g., Cadence® DFII, Virtuoso, Spice simulator, Verilog-A)
  • Good knowledge of CMOS technology
  • Strong problem-solving skills
  • Ability to work in team
  • Interest in working in a start-up environment

Period: Planned starting date ASAP

Location: Milan (Italy) or Dresden (Germany)

We offer:

Inspiring working environment, support and encouragement to develop both personally and professionally, regular team events, ticket for public transport, lunch allowance, employee support, a competitive and equal salary in a semiconductor startup environment and more…

For further questions or to apply please contact:

Lisa Leinemann
HR & Office Manager

Tel.: +49 351 271 88347

career@ferroelectric-memory.com