Last week, FMC managed to achieve a second place out of a total of 1400 applicants at Shenzhen’s Innovation and Entrepreneurship International Competition:

http://itcsz.cn/

For more information on China’s general support of memory technologies, see also:

https://semiengineering.com/china-unveils-memory-plans/

An article on FMC’s ferroelectric memory technology has just been published: https://semiengineering.com/a-new-memory-contender/. It represents a nice overview on the range of semiconductor innovations that could emerge during the next years due to ferroelectric hafnium oxide. Enjoy the read!

FMC has been selected to join the German Accelerator Tech Program (https://germanaccelerator.com/). The program supports high potential German technology startups and emerging companies to enter the U.S. market and develop into global market leaders.

Meet us in person in Silicon Valley during Q1/2018!

Have a look at talk 19.7 at IEDM next week (https://ieee-iedm.org/session-19-memory-technology-charge-based-memories-and-advanced-memories/) to get the latest update on FeFET for 28 nm and 22 nm FDSOI.

Looking forward to meet you there!

FMC is proud to announce that we have been selected on “EETimes Silicon 60: Emerging Companies to Watch”!

https://www.eetimes.com/document.asp?doc_id=1332584

FMC just received a seed investment from HTGF to implement first memory IP products by 2018. “With the potential to outperform the state of the art by orders of magnitude, FMC could disrupt an entire market. We are excited to be part of that journey.” says Yann Fiebig, HTGF’s investment manager. For more details see:

https://high-tech-gruenderfonds.de/en/dresden-memory-start-up-ferroelectric-memory-company-fmc-receives-seed-investment-by-htgf/

On the 22^nd of September, FMC presents on “CMOS Compatible Ferroelectric Devices for Beyond 1X nm Technology Nodes” at this year’s SSDM conference in Sendai, Japan. The talk will be given by Dr. Halid Mulaosmanovic from our mother institute NaMLab gGmbH (http://www.ssdm.jp/index.html).

Moreover, on the 25^th of September, FMC’s CEO Dr. Stefan Müller will talk about “FeFET – The ideal embedded NVM for the age of IoT” at this year’s “Leading Edge Embedded NVM Workshop” in Gardanne, France (http://www.e-nvm.org/fr/home.html).

FMC is looking forward to meet you in Japan and France!

For the first time researchers from IMEC presented the feasibility of FeFET-based 3D NAND architectures utilizing ferroelectric hafnium oxide. The results were shown at this year’s VLSI conference in Kyoto, Japan. For details please visit https://phys.org/news/2017-06-breakthrough-cmos-compatible-ferroelectric-memory.html

Discover the latest FeFET publication of our parent institute NaMLab at this year’s 2017 Symposia on VLSI Technology and Circuits http://www.vlsisymposium.org, session 13, talk T13-3 (Thursday, June 8th, 09:20 AM). We discuss the possibilities of FeFET devices to serve as synapses for neuromorphic systems. Moreover, we recommend session 12 which is 100% dedicated to devices based on ferroelectric hafnia and its solid solution HZO. Explore the possibilities of ferroelectric HfO2!

In an interview with Mark LaPedus from Semiconductor Engineering FMC’s CEO Stefan Mueller talks about technical aspects and applications of hafnium oxide based Ferroelectric Field Effect Transistors (FeFETs).

Check it out at http://semiengineering.com/what-are-fefets/.