The FeFET shows nonvolatile characteristics due to the fact that the two stable, remanent polarization states of the now ferroelectric gate insulator modify the threshold voltage even when supply voltage is removed. Accordingly, the binary states are encoded in the threshold voltage of the transistor (see Fig. 4). Even though similar to Flash in its operation, the FeFET provides orders of magnitude improvement in almost any performance attribute (see also “Major differentiation to competition”). The FeFET for HKMG is introduced in order to become what Flash is today for Poly / SiON technology nodes: The overall leader in nonvolatile memories.